Antimony compounds useful for deposition of antimony-containing materials

ABSTRACT

Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A Ge 2 Sb 2 Te 5  chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

CROSS-REFERENCE TO RELATED APPLICATION APPLICATIONS

This is a U.S. national phase under the provisions of 35 U.S.C. §371 ofInternational Patent Application No. PCT/US09/42290 filed Apr. 30, 2009,which in turn claims the benefit of priority under 35 U.S.C. §119(e) ofU.S. Provisional Patent Application No. 61/050,111 filed on May 2, 2008.The disclosures of such international patent application and U.S.provisional application are hereby incorporated herein by reference intheir respective entireties, for all purposes.

FIELD OF THE INVENTION

The present invention relates to precursors for use in depositingantimony-containing films on substrates such as wafers or othermicroelectronic device substrates, as well as associated processes ofmaking and using such precursors, and source packages of suchprecursors.

DESCRIPTION OF THE RELATED ART

In the manufacture of microelectronic devices, there is emerginginterest in the deposition of Ge₂Sb₂Te₅ chalcogenide thin films fornonvolatile Phase Change Memory (PCM), due to its relatively easyintegration pathways with silicon-based integrated circuits. Chemicalvapor deposition (CVD) and atomic layer deposition (ALD) processing ofthese materials are of primary interest as deposition techniques foradvanced device applications.

The anticipated use of high aspect ratio geometries in PCMs and thecorresponding requirement to achieve smooth films of proper phase andnon-segregated character, require processes that are efficient informing high-quality antimony-containing films at low temperatures(<400° C.). Suitable antimony precursors are required that arecompatible with such requirements, and that preferably have highvolatility at standard temperature and pressure conditions.

SUMMARY OF THE INVENTION

The present invention relates to antimony precursors useful fordepositing antimony-containing films on substrates such as wafers orother microelectronic device substrates, as well as associated processesof making and using such precursors, and source packages of suchprecursors.

In one aspect, the invention relates to an antimony precursor selectedfrom among the following general classes:

wherein:

each of R, R¹, R², R³, R⁴, R⁵, R⁶, R⁷, R⁸, and R⁹ is the same as ordifferent from others, and each is independently selected from H,halogen, C₁-C₆ alkyl, C₁-C₆ alkoxy, C₃-C₈ cycloalkyl, C₆-C₁₀ aryl,silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl,aryloxyalkyl, imidoalkyl and acetylalkyl;

X is the same as or different from others, and each is independentlyselected from H, halogen, C₁-C₆ alkyl, C₁-C₆ alkoxy, C₃-C₈ cycloalkyl,C₆-C₁₀ aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine,alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, amidinate,guanidinate, isourate, cyclopentadienyl (C₅R₅); and

n is an integer from 1 to 7, e.g., from 1 to 6.

Specific compounds within these general formulae include the following:

The antimony-containing precursors can be included in a compositioncomprising: the antimony-containing precursor and a solvent medium inwhich the compound is dissolved.

A further aspect of the invention relates a precursor vapor comprisingvapor of an antimony-containing precursor described above.

The antimony-containing precursors can be used to deposit anantimony-containing film on a substrate. The method for depositing thefilm comprises volatilizing an antimony-containing precursor to form aprecursor vapor, and contacting the substrate with the precursor vaporunder deposition conditions to form the antimony-containing film on thesubstrate. The antimony-containing precursors have one of the formulaedescribed above.

A further aspect of the invention relates to a packaged precursor,comprising a precursor storage and vapor dispensing vessel havingdisposed therein an antimony-containing precursor with the formuladescribed above.

The antimony-containing precursors can be used as the antimony componentto form a GST film on a substrate, by depositing the antimony-containingprecursors, along with one or more germanium and tellurium-containingprecursors, on the substrate from a vapor comprising the precursor.

The precursors can also be used to form PCRAM devices, by forming a GSTfilm on a substrate for fabrication of said device. The forming stepcomprises depositing the antimony-containing precursors, along withgermanium and tellurium-containing precursors, on the substrate from avapor comprising the precursors.

The antimony-containing precursors can be present in a compositioncomprising the antimony-containing precursor and a solvent medium inwhich said compound is dissolved.

The antimony-containing precursors can be prepared, for example, using aprocess as described below:

wherein

X is halogen,

M is Li, Na, or K, and

each R is, independently,

the same as or different from others, and each is independently selectedfrom H, halogen, C₁-C₆ alkyl, C₁-C₆ alkoxy, C₃-C₈ cycloalkyl, C₆-C₁₀aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine,alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, amidinate—C(NR₂)(NR₃)R₄, guanidinate —C(NR₂)(NR₃)NR⁴R⁵, isourate, cyclopendienyl(C₅R₅), and guanidinate (—N═C—(NMe₂)₂).

When preparing the compounds, it alternatively may be advantageous tostart with an antimony trihalide, then form the ring as described above,leaving a single halogen on the antimony. This halogen can be reactedwith an anionic reagent such as lithium-cyclopentadienide compound toform the desired products. This reaction scheme is outlined below:

wherein

M=Li, Na, or K;

X═Cl, Br, or I;

each of R¹, R², R³ and R⁴ is the same as or different from others, andeach is independently selected from H, C₁-C₆ alkyl, C₁-C₆ alkoxy, C₃-C₈cycloalkyl, C₆-C₁₀ aryl, silyl, substituted silyl, aminoalkyl,alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl.

Another synthetic approach is to react the neutral diamine directly withan antimony trihalide in the presence of a base to scavenge theliberated HCl according to the scheme below:

Then, the resulting compound can be reacted with a cyclopentadienylanion to form compounds of the formula:

wherein the R′ group attached to the antimony atom is a cyclopentadienylmoiety, as shown below:

Where R₁₋₄ are as described above, and wherein the attachment to the Sbcan result in either σ- or π-bonded complexes as illustrated by thefollowing specific compounds:

A still further aspect of the invention relates to a precursor vaporcomprising vapor of an antimony precursor as described above.

Another aspect of the invention relates to a method of depositing anantimony-containing film on a substrate, comprising volatilizing anantimony precursor as described herein to form a precursor vapor, andcontacting the substrate with the precursor vapor under depositionconditions to form the antimony-containing film on the substrate,wherein said antimony precursor is selected from the group consistingof:

wherein:

each of R, R¹, R², R³, R⁴, R⁵, R⁶, R⁷, R⁸, and R⁹ is the same as ordifferent from others, and each is independently selected from H,halogen, C₁-C₆ alkyl, C₁-C₆ alkoxy, C₃-C₈ cycloalkyl, C₆-C₁₀ aryl,silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl,aryloxyalkyl, imidoalkyl and acetylalkyl;

X is the same as or different from others, and each is independentlyselected from H, halogen, C₁-C₆ alkyl, C₁-C₆ alkoxy, C₃-C₈ cycloalkyl,C₆-C₁₀ aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine,alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, amidinate,guanidinate, isourate, cyclopentadienyl (C₅R₅); and

n is an integer of from 1 to 7, e.g., from 1 to 6.

A further aspect of the invention relates to a packaged precursor,comprising a precursor storage and vapor dispensing vessel havingdisposed therein an antimony precursor as described above.

A further aspect of the invention relates to a method of forming a GSTfilm on a substrate, comprising depositing antimony on the substratefrom vapor of an antimony precursor as described above.

The invention in another aspect relates to a method of making a PCRAMdevice, comprising forming a GST film on a substrate for fabrication ofsaid device, wherein said forming comprises depositing antimony on thesubstrate from vapor of an antimony precursor selected from among theabove described.

The precursors can be used to form a GST film on a substrate, bydepositing one or more of the antimony-containing precursors describedherein along with one or more germanium and tellurium-containingprecursors on the substrate from a vapor comprising the precursors.

The precursors can also be used to form PCRAM devices, by forming a GSTfilm on a substrate for fabrication of said device as described above.

In one aspect, the invention further relates to a method of combatingpre-reaction of precursors described herein in a vapor depositionprocess for forming a film on a substrate, wherein the precursorsdescribed herein are susceptible to pre-reaction adversely affecting thefilm. In this aspect, the method involves introducing to the process apre-reaction-combating agent selected from the group consisting of (i)heteroatom (O, N, S) organo Lewis base compounds, (ii) free radicalinhibitors, and (iii) deuterium-containing reagents.

Another aspect of the invention relates to a method of combatingpre-reaction of the precursors described in a vapor deposition processin which multiple feed streams are flowed to a deposition locus to forma film on a substrate, wherein at least one of said multiple feedstreams includes a precursor susceptible to pre-reaction adverselyaffecting the film. The method involves introducing to at least one ofsaid multiple feed streams or supplied materials therefor, or to thedeposition locus, a pre-reaction-combating agent selected from the groupconsisting of (i) heteroatom (O, N, S) organo Lewis base compounds, (ii)free radical inhibitors, and (iii) deuterium-containing reagents.

A still further aspect of the invention relates to a composition,comprising a precursor as described herein and a pre-reaction-combatingagent for said precursor, said pre-reaction-combating agent beingselected from the group consisting of (i) heteroatom (O, N, S) organoLewis base compounds, (ii) free radical inhibitors, and (iii)deuterium-containing reagents.

In a further aspect, the invention relates to a method of combatingpre-reaction of a vapor phase precursor described herein in contact witha substrate for deposition of a film component thereon. The methodinvolves contacting said substrate, prior to said contact of the vaporphase precursor therewith, with a pre-reaction-combating agent selectedfrom the group consisting of (i) heteroatom (O, N, S) organo Lewis basecompounds, (ii) free radical inhibitors, and (iii) deuterium-containingreagents.

In a further aspect, the invention relates to a process wherein thepre-reaction combating reagent is introduced to passivate the surface ofa growing film or slow the deposition rate, followed by reactivationusing an alternative precursor or co-reactant (for example H₂, NH₃,plasma, H₂O, hydrogen sulfide, hydrogen selenide, diorganotellurides,diorganosulfides, diorganoselenides, etc.). Such passivation/retardationfollowed by reactivation thus may be carried out in an alternatingrepetitive sequence, for as many repetitive cycles as desired, in ALD orALD-like processes. Pre-reaction-combating agents can be selected fromthe group consisting of (i) heteroatom (O, N, S) organo Lewis basecompounds, (ii) free radical inhibitors, and (iii) deuterium-containingreagents.

Another aspect of the invention relates to a vapor phase depositionprocess for forming a film on a substrate involving cyclic contacting ofthe substrate with at least one film precursor described herein that isundesirably pre-reactive in the vapor phase. The process involvesintroducing to said film during growth thereof a pre-reaction-combatingreagent that is effective to passivate a surface of said film or to slowrate of deposition of said film precursor, and after introducing saidpre-reaction-combating reagent, reactivating said film with a differentfilm precursor.

Other aspects, features and embodiments of the invention will be morefully apparent from the ensuing disclosure and appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic representation of a material storage anddispensing package containing a precursor of the present invention, inone embodiment thereof.

FIG. 2 is a STA plot of a typical Sb precursor, {tBuNCH₂CH₂NtBu}SbNMe₂.

FIG. 3 shows ¹H and ¹³NMR spectra for {tBuNCH₂CH₂NtBu}SbNMe₂.

FIG. 4 is a schematic representation of a vapor deposition systemaccording to one embodiment of the present invention, whereinsuppression of pre-reaction of the precursors is achieved by addition ofpre-reaction-combating reagent to one or more feed streams in the vapordeposition system.

DETAILED DESCRIPTION

The present invention relates to antimony precursors useful infilm-forming applications, e.g., in chemical vapor deposition and atomiclayer deposition applications, to form corresponding antimony-containingfilms on substrates, as well as associated processes of making and usingsuch precursors, and packaged forms of such precursors.

As used herein, the term “film” refers to a layer of deposited materialhaving a thickness below 1000 micrometers, e.g., from such value down toatomic monolayer thickness values. In various embodiments, filmthicknesses of deposited material layers in the practice of theinvention may for example be below 100, 10, or 1 micrometers, or invarious thin film regimes below 200, 100, or 50 nanometers, depending onthe specific application involved. As used herein, the term “thin film”means a layer of a material having a thickness below 1 micrometer. Inaddition, “thin film” refers to material deposited into high-aspectratio narrow trench and via structures <90 nm.

As used herein, the singular forms “a”, “and”, and “the” include pluralreferents unless the context clearly dictates otherwise.

As used herein, the identification of a carbon number range, e.g., inC₁-C₁₂ alkyl, is intended to include each of the component carbon numbermoieties within such range, so that each intervening carbon number andany other stated or intervening carbon number value in that statedrange, is encompassed, it being further understood that sub-ranges ofcarbon number within specified carbon number ranges may independently beincluded in smaller carbon number ranges, within the scope of theinvention, and that ranges of carbon numbers specifically excluding acarbon number or numbers are included in the invention, and sub-rangesexcluding either or both of carbon number limits of specified ranges arealso included in the invention. Accordingly, C₁-C₁₂ alkyl is intended toinclude methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl,nonyl, decyl, undecyl and dodecyl, including straight chain as well asbranched groups of such types. It therefore is to be appreciated thatidentification of a carbon number range, e.g., C₁-C₁₂, as broadlyapplicable to a substituent moiety, enables, in specific embodiments ofthe invention, the carbon number range to be further restricted, as asub-group of moieties having a carbon number range within the broaderspecification of the substituent moiety. By way of example, the carbonnumber range C₁-C₁₂ alkyl, may be more restrictively specified, inparticular embodiments of the invention, to encompass sub-ranges such asC₁-C₄ alkyl, C₂-C₈ alkyl, C₂-C₄ alkyl, C₃-C₅ alkyl, or any othersub-range within the broad carbon number range.

The precursors of the invention may be further specified in specificembodiments by provisos or limitations excluding specific substituents,groups, moieties or structures, in relation to various specificationsand exemplifications thereof set forth herein. Thus, the inventioncontemplates restrictively defined compositions, e.g., a compositionwherein R^(i) is C₁-C₁₂ alkyl, with the proviso that R^(i)≠C₄ alkyl whenR^(j) is silyl.

The invention relates in one aspect to antimony-containing precursorsuseful for low temperature (T<400° C.) deposition of Sb-containingfilms, e.g., for forming germanium-antimony-antimony (GST) films such asGe₂Sb₂Te₅ on substrates such as wafers in the production of phase changerandom access memory devices.

The antimony-containing precursors described herein are suitable forforming such films by techniques such as atomic layer deposition (ALD)and chemical vapor deposition (CVD). Preferred precursors of such typehave high volatility and desirable transport properties for ALD and CVDapplications.

In accordance with another aspect of the invention, theantimony-containing precursors described herein are used to formSb-containing highly conformal films of superior character by a vapordeposition process such as ALD or CVD.

The antimony-containing precursors described herein as being useful forthe aforementioned film-forming applications can readily be formed bythe following generalized reaction:

General Procedure for Synthesizing the Antimony Compounds

wherein each R is the same as or different from others, and each isindependently selected from H, halogen, C₁-C₆ alkyl, C₁-C₆ alkoxy, C₃-C₈cycloalkyl, C₅-C₁₀ aryl, silyl, substituted silyl, amide, aminoalkyl,alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl,amidinate —C(NR₂)(NR₃)R₄, guanidinate —C(NR₂)(NR₃)NR⁴R⁵, isourate,cyclopendienyl (C₅R₅), guanidinate (—N═C—(NMe₂)₂),

When preparing the compounds, it alternatively may be advantageous tostart with an antimony trihalide, then form the ring as described above,leaving a single halogen on the antimony. This halogen can be reactedwith an anionic reagent such as lithium-cyclopentadienide compound toform the desired products. This reaction scheme is outlined below:

wherein

M=Li, Na, or K;

X═Cl, Br, or I;

each of R¹, R², R³ and R⁴ is the same as or different from others, andeach is independently selected from H, C₁-C₆ alkyl, C₁-C₆ alkoxy, C₃-C₈cycloalkyl, C₆-C₁₀ aryl, silyl, substituted silyl, aminoalkyl,alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl.

Another synthetic approach is to react the neutral diamine directly withan antimony trihalide in the presence of a base to scavenge theliberated HCl according to the scheme below:

Then, the resulting compound can be reacted with a cyclopentadienylanion to form compounds of the formula:

wherein the R′ group attached to the antimony atom is a cyclopentadienylmoiety, as shown below:

The antimony-containing precursors described herein are usefullyemployed as CVD/ALD precursors for the deposition of Sb-containingfilms, e.g., by liquid delivery techniques in which such compounds areprovided in compositions including suitable solvent media. Usefulsolvents for such purpose in specific applications may include, withoutlimitation, alkanes (e.g., hexane, heptane, octane, and pentane),aromatics (e.g., benzene or toluene), and amines (e.g., triethylamine,tert-butylamine). The solvent medium in which the Sb precursor orprecursors are dissolved or suspended may be a single-component solventor a multi-component solvent composition.

The precursors when in a liquid state can also be delivered neat usingALD/CVD liquid delivery techniques, in which the liquid is volatilizedto form a corresponding precursor vapor, which then is contacted withthe substrate on which the antimony-containing film is to be formed,under appropriate vapor deposition conditions.

When the precursors are in a solid state, they may be volatilized fordelivery using any suitable solid delivery system, such as the soliddelivery and vaporizer unit commercially available under the trademarkProE-Vap from ATMI, Inc. (Danbury, Conn., USA). The precursor orprecursors (since the invention contemplates use of multiple Teprecursors of differing type) are volatilized to form the correspondingprecursor vapor which then is contacted with a wafer or other substrateto deposit an antimony-containing layer thereon.

The precursor vapor formed from the Sb precursor may be mixed withcarrier or co-reactant gases in various embodiments, to obtain desireddeposition thicknesses, growth rates, etc., as will be apparent to thoseskilled in the art.

The invention in a further aspect relates to a novel synthetic route forthe preparation of bridging diamide antimony compounds. The newsynthesis technique overcomes the difficulties and complexity of priorart synthetic approaches, as variously involving low yields andgeneration of side products that restricts recovery of high purityproducts, and forms monomeric complexes through chelation rather thanbridging multiple metal centers resulting in higher nuclearity complexesincluding dimeric, oligomeric, and polymeric structures. In a specificaspect, the invention provides antimony bis-amides that are useful forlow temperature deposition of antimony amides on substrates.

The antimony-containing precursors have been, at least in some cases,characterized by NMR spectroscopy and thermal analysis (TGA/DSC), as lowmelting solids which show good transport properties and low residualmass (<5%). Thus, the compounds are usefully employed as a precursor forthe low temperature deposition of antimony-containing films.

The invention therefore provides a number of antimony-containingcompounds of a useful character for ALD or CVD deposition of antimony orantimony-containing films, e.g., for fabricating GST devices comprisingGe₂Sb₂Te₅ films.

The following reaction scheme therefore may be used for production ofsuch antimony precursors.

wherein

X is halogen,

M is Li, Na, or K, and

each R is, independently,

the same as or different from others, and each is independently selectedfrom H, halogen, C₁-C₆ alkyl, C₁-C₆ alkoxy, C₃-C₈ cycloalkyl, C₆-C₁₀aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine,alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, amidinate—C(NR₂)(NR₃)R₄, guanidinate —C(NR₂)(NR₃)NR⁴R⁵, isourate, cyclopendienyl(C₅R₅), guanidinate (—N═C—(NMe₂)₂),

When preparing the compounds, it alternatively may be advantageous tostart with an antimony trihalide, then form the ring as described above,leaving a single halogen on the antimony. This halogen can be reactedwith an anionic reagent such as lithium-cyclopentadienide compound toform the desired products. This reaction scheme is outlined below:

wherein

M=Li, Na, or K;

X═Cl, Br, or I;

each of R¹, R², R³ and R⁴ is the same as or different from others, andeach is independently selected from H, C₁-C₆ alkyl, C₁-C₆ alkoxy, C₃-C₈cycloalkyl, C₆-C₁₀ aryl, silyl, substituted silyl, aminoalkyl,alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl.

Another synthetic approach is to react the neutral diamine directly withan antimony trihalide in the presence of a base to scavenge theliberated HCl according to the scheme below:

Then, the resulting compound can be reacted with a cyclopentadienylanion to form compounds of the formula:

wherein the R′ group attached to the antimony atom is a cyclopentadienylmoiety, as shown below:

Where R₁₋₄ are as described above, and wherein the attachment to the Sbcan result in either σ- or π-bonded complexes as illustrated by thefollowing specific compounds:

Alternatively, a similar synthesis can be performed, in which thestarting diamines have a different chain length, to produce cyclicdiamido-antimony compounds of a different size than a five-membered ringusing a similar strategy as described above.

The following reaction scheme therefore may be used for production ofsuch antimony precursors.

wherein

M=Li, Na, or K;

X═Cl, Br, or I;

and n is an integer between 1 and 6

each R is the same as or different from others, and each isindependently selected from H, C₁-C₆ alkyl, C₁-C₆ alkoxy, C₃-C₈cycloalkyl, C₆-C₁₀ aryl, silyl, substituted silyl, aminoalkyl,alkoxyalkyl, aryloxyalkyl, imidoalkyl, acetylalkyl, andoptionally-substituted cyclopentadienyl.

The same variation in the reaction can be used in the embodiment used tospecifically form the cyclopentadienyl analogue, where anoptionally-substituted cyclopentadienyl anion is attached to the Sbatom.

The antimony-containing compounds described herein have high volatilityand low decomposition temperatures, and thus are well suited for ALD andCVD applications.

These precursors accommodate low temperature deposition applications,having good volatilization and transport properties. They can bedelivered in a neat form in the case of precursor compounds in liquidform, or in compositions including suitable solvent media. Usefulsolvents for such purpose in specific applications may include, withoutlimitation, alkanes (e.g., hexane, heptane, octane, and pentane),aromatics (e.g., benzene or toluene), and amines (e.g., triethylamine,tert-butylamine) or mixtures thereof, as above described.

The precursors when in a solid state can be volatilized for deliveryusing any suitable solid delivery system, such as the solid delivery andvaporizer unit commercially available under the trademark ProE-Vap fromATMI, Inc. (Danbury, Conn., USA). The precursor or precursors (since theinvention contemplates use of multiple Te precursors of differing type)are volatilized to form the corresponding precursor vapor which then iscontacted with a wafer or other substrate to deposit anantimony-containing layer thereon, e.g., for forming a GST layer.

The invention in yet another aspect relates to antimony compounds withnitrogen donor ligands useful for deposition applications to depositantimony or antimony-containing films on substrates, for applicationssuch as GST phase change random access memory (PRAM) devices.

This aspect of the invention relates more specifically to Sb(III)precursors having at least one nitrogen-based ligand as describedherein.

The antimony-containing precursors described herein can be used in filmformation processes with appropriate co-reactants, e.g., in a continuousdeposition mode (CVD) or pulsed/atomic layer deposition mode (ALD), todeposit films of superior character.

For metal-like films, reducing atmospheres are advantageously used. Theprecursors of the invention can be utilized as low temperaturedeposition precursors with reducing co-reactants such as hydrogen,H₂/plasma, amines, imines, hydrazines, silanes, germanes such as GeH₄,ammonia, alkanes, alkenes and alkynes. For CVD modes of film formation,reducing agents such as H₂, and NH₃ are preferred, and plasmas of theseco-reactants may be used in digital or ALD mode, wherein theco-reactants are separated from the precursor in a pulse train,utilizing general CVD and ALD techniques within the skill of the art,based on the disclosure herein. More aggressive reducing agents can alsobe used in a digital or ALD mode since co-reactants can be separated,preventing gas phase reactions. For ALD and conformal coverage in highaspect ratio structures, the precursor preferably exhibits self-limitingbehavior in one type of atmosphere (e.g., inert or weaklyreducing/oxidizing gas environments) and exhibits rapid decomposition toform a desired film in another type of atmosphere (e.g., plasma,strongly reducing/oxidizing environments).

Formation of Chalcogenide Films with Pre-Reaction-Combating Agents

The invention in another aspect involves use of control agents to combatvapor phase pre-reaction of the precursors described herein, thatotherwise causes uneven nucleation on the substrate, longer incubationtimes for deposition reactions, and lower quality product films. Suchpre-reaction may for example be particularly problematic in applicationsinvolving chalcogenide films, related source materials (O, S, Se, Te,Ge, Sb, Bi, etc.), and/or manufacture of phase change memory andthermoelectric devices.

Pre-reaction may occur when the precursor reagents described herein areintroduced to the deposition chamber, as in chemical vapor deposition,and may also occur in atomic layer deposition (ALD) processes, dependingon the specific arrangement of ALD cycle steps and the specific reagentsinvolved.

The invention therefore contemplates the use of control agents with theprecursors described herein, whereby detrimental gas phase pre-reactionsare suppressed, mitigated or eliminated, so that deposition reactionsare induced/enhanced on the substrate surface, and films of superiorcharacter are efficiently formed.

The control agents that can be utilized with precursors of the inventionfor such purpose include agents selected from the group consisting of(i) heteroatom (O, N, S) organo Lewis base compounds, (ii) free radicalinhibitors, and (iii) deuterium-containing reagents.

These agents can be utilized to lessen deleterious gas phasepre-reaction I′ll precursors by various approaches, including:

(1) addition to the precursor composition of a pre-reaction suppressantcomprising one or more heteroatom (O, N, S) organo Lewis base compoundssuch as 1,4-dioxane, thioxane, ethers, polyethers, triethylamine (TEA),triazine, diamines, N,N,N′,N′-tetramethylethylenediamine,N,N,N′-trimethylethylenediamine, amines, imines, and pyridine;

(2) addition to the precursor composition of a free radical inhibitor,such as butylated hydroxy toluene (BHT), hydroquinone, butylated hydroanisole (BHA), diphenylamine, ethyl vanillin, etc.;

(3) use of modified chalcogenide precursors, in which hydrogensubstituents have been replaced with deuterium (D) substituents, toprovide deuterated analogs for vapor phase deposition; and

(4) addition to the precursor composition of a deuterium source, todeuterate the precursor in situ.

The pre-reaction-combating agents described above (suppressants, freeradical inhibitors, deuterium sources and/or deuterated precursors) canbe introduced to any of the feed streams to the vapor deposition processin which the film is to be formed. For example, suchpre-reaction-combating agents can be introduced to one or more ofprecursor feed stream(s), inert carrier gas stream(s) to whichchalcogenide precursor(s) or other reagents are subsequently added forflow to the deposition chamber, co-reactant feed stream(s) flowed to thedeposition chamber, and/or any other stream(s) that is/are flowed to thedeposition chamber and in which the pre-reaction-combating agent(s)is/are useful for reduction or elimination of premature reaction of theprecursors that would otherwise occur in the absence of such agent(s).

The aforementioned suppressants, free radical inhibitors and/ordeuterium source reagents in specific embodiments are co-injected withthe precursor(s), e.g., metal source reagent(s), to effect at leastpartial reduction of pre-reaction involving the precursor(s) andreagent(s).

The pre-reaction-combatting agent can alternatively be added directed tothe deposition locus, e.g., the deposition chamber to which theprecursor vapor is introduced for contacting with the substrate todeposit the film thereon, to suppress deleterious vapor phasepre-reaction involving the precursor(s) and/or other reagents.

As another approach, in the broad practice of the present invention, thesuppressant, free radical inhibitor and/or deuterium source can be addedto a solution containing the precursor and/or another metal sourcereagent, and the resulting solution can be utilized for liquid deliveryprocessing, in which the solution is flowed to a vaporizer to form asource vapor for contacting with the substrate to deposit the depositionspecies thereon.

Alternatively, if the precursor and/or another metal source reagent arenot in an existing solution, the suppressant, free radical inhibitorand/or deuterium source can be added to form a mixture or a solutionwith the precursor and/or another metal source reagent, depending on therespective phases of the materials involved, and theircompatibility/solubility.

As a still further approach, the suppressant, free radical inhibitorand/or deuterium source can be utilized for surface treatment of thesubstrate prior to contacting of the substrate with the precursor and/orother metal source reagent.

The invention therefore contemplates various vapor depositioncompositions and processes for forming films on substrates, in whichpre-reaction of the precursors is at least partially attenuated by oneor more pre-reaction-combating agents selected from among heteroatom (O,N, S) organo Lewis base compounds, sometimes herein referred to assuppressor agents, free radical inhibitors, and/or deuterium sourcereagents. Use of previously synthesized deuterated precursors ororganometal compounds is also contemplated, as an alternative to in situdeuteration with a deuterium source. By suppressing precursorprereaction with these approaches, product films of superior charactercan be efficiently formed.

The control agent can be used for combating pre-reaction of chalcogenideprecursor in a process in which multiple feed streams are flowed to adeposition locus to form a film on a substrate, wherein at least one ofthe multiple feed streams includes a precursor susceptible topre-reaction adversely affecting the film, in which the method involvesintroducing the control agent to at least one of such multiple feedstreams or supplied materials therefor, or to the deposition locus.

The pre-reaction combating reagent alternatively can be introduced topassivate the surface of a growing chalcogenide film or slow thedeposition rate, followed by reactivation using an alternative precursoror co-reactant (for example H₂, NH₃, plasma, H₂O, hydrogen sulfide,hydrogen selenide, diorganotellurides, diorganosulfides,diorganoselenides, etc.), thereby carrying out passivation/retardationfollowed by reactivation steps, e.g., as an alternating repetitivesequence. Such sequence of passivation/retardation followed byreactivation can be carried out for as many repetitive cycles asdesired, in ALD or ALD-like processes. The steps may be carried out forthe entire deposition operation, or during some initial, intermediate orfinal portion thereof.

The invention therefore contemplates precursor compositions includingthe precursor and the pre-reaction-combating reagent. Within thecategories of pre-reaction-combating reagents previously described,viz., (i) heteroatom (O, N, S) organo Lewis base compounds, (ii) freeradical inhibitors, and (iii) deuterium-containing reagents, suitablepre-reaction-combating reagents for specific applications may be readilydetermined within the skill of the art, based on the disclosure herein.

Heteroatom (O, N, S) organo Lewis base compounds may be of varied type,e.g., containing an oxo (—O—) moiety, a nitrogen ring atom or pendantamino or amide substituent, a sulfur ring atom or pendant sulfide,sulfonate or thio group, as effective to at least partially lessenpre-reaction of the precursor and other organo metal reagents in theprocess system. Illustrative examples of heteroatom (O, N, S) organoLewis base compounds having utility in specific applications of theinvention include, without limitation, 1,4-dioxane, thioxane, ethers,polyethers, triethylamine, triazine, diamines,N,N,N′,N′-tetramethylethylenediamine, N,N,N′-trimethylethylenediamine,amines, imines, pyridine, and the like.

The heteroatom organo Lewis base compound in various specificembodiments of the invention may include a guanidinate compound, e.g.,(Me₂N)₂C═NH.

One preferred class of heteroatom organo Lewis base compounds for suchpurpose includes R₃N, R₂NH, RNH₂, R₂N(CH₂)_(x)NR₂, R₂NH(CH₂)_(x)NR₂,R₂N(CR₂)_(x)NR₂, and cyclic amines —N(CH₂)_(x)—, imidazole, thiophene,pyrrole, thiazole, urea, oxazine, pyran, furan, indole, triazole,triazine, thiazoline, oxazole, dithiane, trithiane, crown ethers,1,4,7-triazacyclononane, 1,5,9-triazacyclododecane, cyclen, succinamide,and substituted derivatives of the foregoing, wherein R can be hydrogenor any suitable organo moieties, e.g., hydrogen, C₁-C₈ alkyl, C₁-C₈alkoxy, C₁-C₈ alkene, C₁-C₈ alkyne, and C₁-C₈ carboxyl, and wherein x isan integer having a value of from 1 to 6.

The heteroatom organo Lewis base compounds may be utilized in theprecursor composition at any suitable concentration, as may beempirically determined by successive deposition runs in which theheteroatom organo Lewis base compound concentration is varied, andcharacter of the resulting film is assessed, to determine an appropriateconcentration. In various embodiments, the heteroatom organo Lewis basecompound may be utilized in the concentration of 1-300% of the amount ofprecursor. Specific sub-ranges of concentration values within a range of0.01-3 equivalents of the heteroatom organo Lewis base compound may beestablished for specific classes of precursors, without undueexperimentation, based on the disclosure herein.

The pre-reaction-combating reagent may additionally or alternativelycomprise free radical inhibitors that are effective to lessen the extentof pre-reaction between the precursor and another organo metal reagent.Such free radical inhibitors may be of any suitable type, and may forexample include hindered phenols. Illustrative free radical inhibitorsinclude, without limitation, free radical scavengers selected from thegroup consisting of: 2,6-ditert-butyl-4-methyl phenol,2,2,6,6-tetramethyl-1-piperidinyloxy, 2,6-dimethylphenol,2-tert-butyl-4-hydroxyanisole, 3-tert-butyl-4-hydroxyanisole, propylester 3,4,5-trihydroxy-benzoic acid, 2-(1,1-dimethylethyl)-1,4benzenediol, diphenylpicrylhydrazyl, 4-tert-butylcatechol,N-methylaniline, 2,6-dimethylaniline, p-methoxydiphenylamine,diphenylamine, N,N′-diphenyl-p-phenylenediamine, p-hydroxydiphenylamine,phenol, octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl) propionate,tetrakis(methylene(3,5-di-tert-butyl-4-hydroxy-hydrocinnamate) methane,phenothiazines, alkylamidonoisoureas, thiodiethylenebis(3,5,-di-tert-butyl-4-hydroxy-hydrocinnamate,1,2,-bis(3,5-di-tert-butyl-4-hydroxyhydrocinnamoyl) hydrazine,tris(2-methyl-4-hydroxy-5-tert-butylphenyl) butane, cyclicneopentanetetrayl bis(octadecyl phosphite), 4,4′-thiobis(6-tert-butyl-m-cresol, 2,2′-methylenebis (6-tert-butyl-p-cresol),oxalyl his (benzylidenehydrazide) and mixtures thereof. Preferred freeradical inhibitors include BHT, BHA, diphenylamine, ethyl vanillin, andthe like.

Useful concentrations of the free radical inhibitor may be in a range offrom 0.001 to about 0.10% by weight of the weight of the precursor, invarious specific embodiments. More generally, any suitable amount offree radical inhibitor may be employed that is effective to combat thepre-reaction of the precursor in the delivery and deposition operationsinvolved in the film formation process.

The deuterium source compounds afford another approach to suppressingpre-reaction of the chalcogenide precursor. Such deuterium sourcecompounds may be of any suitable type, and may for example includedeuterated pyridine, deuterated pyrimidine, deuterated indole,deuterated imidazole, deuterated amine and amide compounds, deuteratedalkyl reagents, etc., as well as deuterated analogs of the precursorsthat would otherwise be used as containing hydrogen or protonicsubstituents.

Deuterides that may be useful in the general practice of invention aspre-reaction-combating reagents include, without limitation, germaniumand antimony compounds of the formulae R_(x)GeD_(4-x) and R_(x)SbD_(3-x)wherein R can be hydrogen or any suitable organo moieties, e.g.,hydrogen, C₁-C₈ alkyl, C₁-C₈ alkoxy, C₁-C₈ alkene, C₁-C₈ alkyne, andC₁-C₈ carboxyl, and wherein x is an integer having a value of from 1 to6.

The deuterium source reagent may be utilized at any suitableconcentration that is effective to combat pre-reaction of the precursor.Illustrative deuterium source reagent concentrations in specificembodiments of the invention can be in a range of 0.01 to about 5% byweight, based on the weight of precursor.

Thus, a deuterium source compound may be added to one or more of thefeed streams to the vapor deposition process, and/or one of theprecursors or other feed stream components may be deuterated in thefirst instance.

The concentrations of the pre-reaction-combating agents utilized in thepractice of the present invention to at least partially eliminatepre-reaction of the precursors can be widely varied in the generalpractice of the present invention, depending on the temperatures,pressures, flow rates and specific compositions involved. Theabove-described ranges of concentration of the pre-reaction-combatingreagents of the invention therefore are to be appreciated as being of anillustrative character only, with applicable concentrations beingreadily determinable within the skill of the art, based on thedisclosure herein.

The specific mode of introduction or addition of thepre-reaction-combating agent to one or more of the feed streams to thedeposition process may correspondingly be varied, and may for exampleemploy mass flow controllers, flow control valves, metering injectors,or other flow control or modulating components in the flow circuitryjoining the source of the pre-reaction-combating agent with the streamsbeing flowed to the deposition process during normal film-formingoperation. The process system may additionally include analyzers,monitors, controllers, instrumentation, etc., as may be necessary orappropriate to a given implementation of the invention.

In lieu of introduction or addition of the pre-reaction-combating agentto one or more of the flow streams to the vapor deposition process, thepre-reaction-combating agent may be mixed with precursor in the firstinstance, as a starting reagent material for the process. For example,the pre-reaction-combating agent may be mixed in liquid solution withthe precursor, for liquid delivery of the resulting precursor solutionto a vaporizer employed to generate precursor vapor for contact with thesubstrate to deposit the film thereon.

As mentioned, the pre-reaction-combating agent may be added to thedeposition locus to provide active gas-phase suppression of pre-reactionof the precursor vapor(s) that would otherwise be susceptible to suchdeleterious interaction.

As a still further alternative, the pre-reaction-combating agent may beused as a preliminary surface treatment following which the precursorand co-reactants (e.g., H₂, NH₃, plasma, H₂O, hydrogen sulfide, hydrogenselenide, diorganotellurides, diorganosulfides, diorganoselenides, etc.)are delivered to the substrate surface to effect deposition on suchsurface. For such purpose, the pre-reaction-combating agent may beintroduced into one of more of the flow lines to the deposition processand flow to the substrate in the deposition process chamber, prior toinitiation of flow of any precursors. After the requisite period ofcontacting of the substrate with such pre-reaction-combating agent hasbeen completed, the flow of the pre-reaction-combating agent can beterminated, and normal feeding of flow streams to the deposition chambercan be initiated.

It will be apparent from the foregoing description that thepre-reaction-combating agent may be introduced in any of a wide varietyof ways to effect diminution of the pre-reaction of the precursor in thedeposition system.

In one embodiment of the invention, a vapor phase deposition system iscontemplated, comprising:

a vapor deposition chamber adapted to hold at least one substrate fordeposition of a film thereon;

chemical reagent supply vessels containing reagents for forming thefilm;

first flow circuitry arranged to deliver said reagents from saidchemical reagent supply vessels to the vapor deposition chamber;

a pre-reaction-combating agent supply vessel containing apre-reaction-combating agent;

second flow circuitry arranged to deliver the pre-reaction-combatingagent from the pre-reaction-combating agent supply vessel to the firstflow circuitry, to said chemical reagent supply vessels and/or to thevapor deposition chamber.

Referring now to the drawings, FIG. 4 is a schematic representation of avapor deposition system 100 in one embodiment thereof.

In this illustrative system, a pre-reaction-combating agent is containedin a supply vessel 110. The pre-reaction-combating agent can comprise apre-reaction suppressant, a free radical inhibitor, a deuterium source,or a combination of two or more of such agents and/or types of suchagents.

The pre-reaction-combating agent supply vessel is joined by respectiveflow lines 112, 114 and 116, to germanium, antimony and telluriumreagent supply vessels, labeled “G,” “S” and “T,” respectively. Thegermanium precursor in vessel “G” may be a tetraalkyl or tetraamidogermanium compound, such as tetramethyl germanium, tetraethyl germanium,tetraallyl germanium, tetrakis(dimethylamino)germane or other organogermanium compounds. Furthermore, precursor “G” may be a germylenecompound wherein the lone pair on Ge(II) can react in the gas-phase withchalcogen precursors in the absence of a pre-reaction suppresant. Theantimony precursor in vessel “S” can be a trialkyl or triamido antimonycompound, such as tributyl antimony, triisopropyl antimony,tris(dimethylamino)antimony or other organo antimony compound. Thetellurium precursor in vessel “T” can be a dialkyl or diamido telluriumcompound, such as diisopropyl tellurium, dibutyl tellurium,bis[bis(trimethylsilyl)amino]tellurium or other organo telluriumcompound.

The pre-reaction-combating agent therefore can be added to any of thegermanium, antimony and/or tellurium precursors in the respective “G,”“S” and “T” vessels, via the corresponding flow line(s), which for suchpurpose may have flow control valves or other flow-modulating componentstherein.

In the specific process embodiment shown, the germanium, antimony andtellurium precursors are flowed in liquid form in feed lines 118, 120and 122, respectively, to the mixing chamber 124, and the resultingprecursor mixture then is flowed from the mixing chamber 124 in line 126to vaporizer 128. In the vaporizer, the liquid precursor mixture andpre-reaction-combating agent are volatilized to form a precursor vapor.The precursor vapor then flows in line 130 to the showerhead disperser134 in vapor deposition chamber 132, for discharge of precursor mixtureonto the wafer substrate 136 mounted on susceptor 138 in the depositionchamber.

The precursor vapor contacting the wafer substrate 136 serves to depositthe germanium, antimony and tellurium metals on the substrate, to form athin film of germanium-antimony-tellurium (GST) material, e.g., formanufacture of a phase change random access memory device.

The contacted precursor vapor, depleted in metals content, is dischargedfrom the vapor deposition chamber 132 in line 140, and flows to theeffluent abatement unit 142. In the effluent abatement unit 142, thedischarged effluent vapor is treated, e.g., by scrubbing, catalyticoxidation, electrochemical treatment, or in other manner, to yield afinal effluent that is discharged from the abatement unit in line 146.

It will be appreciated that these schematic representation of the vapordeposition system shown in FIG. 4 is of an illustrative character, andthat numerous other arrangements could be utilized for deployment anduse of the pre-reaction-combating agent, including those previouslyillustratively discussed herein. For example, the pre-reaction-combatingagent could be introduced directly to the mixing chamber 124, forblending therein with the respective GST precursors. Alternatively, thepre-reaction-combating agent could be introduced into manifold 118, orother mixing chamber, blender, etc., for combination with the precursorthat is being transported to the deposition locus.

The system shown in FIG. 4 employs liquid delivery of the respectiveprecursors. It will be recognized that if solid-phased precursors areemployed, then solid delivery techniques may be employed, in which solidprecursor is volatilized, e.g., by sublimation of the solid startingmaterial.

In lieu of using a deuterating agent as the pre-reaction-combating agentin the FIG. 4 system, one or more of the germanium, antimony andtellurium precursors could be supplied in the first instance as adeuterated analog of an organo germanium, antimony or telluriumprecursor, in which hydrogen substituents of the organo moiety have beenreplaced with deuterium.

The pre-reaction-combating reagents may be employed in the broadpractice of the present invention to produce improved films for themanufacture of semiconductor products. In general, thepre-reaction-combating reagents described herein may be utilized invarious combinations in specific applications, to suppress or eliminatepre-reaction of the precursor and provide superior nucleation and finalfilm properties.

Liquid Delivery Formulations

Liquid delivery formulations can be employed in which precursors thatare liquids may be used in neat liquid form, or liquid or solidprecursors may be employed in suitable solvents, including for examplealkane solvents (e.g., hexane, heptane, octane, and pentane), arylsolvents (e.g., benzene or toluene), amines (e.g., triethylamine,tert-butylamine), imines and hydrazines or mixtures thereof. The utilityof specific solvent compositions for particular Te precursors may bereadily empirically determined, to select an appropriate singlecomponent or multiple component solvent medium for the liquid deliveryvaporization and transport of the specific antimony precursor that isemployed. In the case of solid precursors of the invention, a soliddelivery system may be utilized, for example, using the ProE-Vap soliddelivery and vaporizer unit (commercially available from ATMI, Inc.,Danbury, Conn., USA).

In general, the thicknesses of metal-containing layers formed using theprecursors of the invention can be of any suitable value. In a specificembodiment of the invention, the thickness of the antimony-containinglayer can be in a range of from 5 nm to 500 nm or more including bothplanar and trench/via geometries.

The various antimony precursor compounds of the invention can beutilized to form GST films in combination with any suitable germaniumand antimony precursors, e.g., by CVD and ALD techniques, forapplications such as PCRAM device manufacture. The process conditionsuseful for carrying out deposition of Sb-containing films can be readilydetermined within the skill of the art by the simple expedient ofselectively varying the delivery and deposition process conditions andcharacterizing the resulting films, to determine the process conditionsenvelope most appropriate for a given deposition application.

In some embodiments, the antimony-containing films are formed onsubstrates, and can be, for example, GST films, amorphous SbTe films, orcrystalline SbTe films, and can be applied, for example, using atomiclayer deposition (ALD) or chemical vapor deposition (CVD) techniques.Such SbTe (e.g. Sb₂Te₃) films may also be employed in thermoelectricdevices.

In another embodiment, amorphous SbTe can be produced by co-depositionof the antimony-containing compounds described herein, and antimonyprecursors such as di-t-butyl tellurium or diisopropyl tellurium,Te(tBu)₂ or Te(iPr)₂, at temperature in a range of from 250° C.-400° C.,e.g., 320° C., using bubbler delivery of the antimony andtellurium-containing precursors in an inert carrier gas stream, e.g., N₂at a flow rate of 20-50 sccm, e.g., 30 sccm. The respective telluriumand antimony precursors used for such deposition can be of any suitabletypes, and such precursors can be delivered for deposition at anysuitable volumetric flow rate, e.g., for the aforementioned flow rate of30 sccm for the illustrative antimony precursor, Te(tBu)₂, and the flowrate for the antimony-containing precursors can be on the order of 5micromoles/minute. The resulting amorphous SbTe films will have anantimony content of approximately 20-70%.

FIG. 1 is a schematic representation of a material storage anddispensing package 100 containing an antimony precursor, according toone embodiment of the present invention.

The material storage and dispensing package 100 includes a vessel 102that may for example be of generally cylindrical shape as illustrated,defining an interior volume 104 therein. In this specific embodiment,the precursor is a solid at ambient temperature conditions, and suchprecursor may be supported on surfaces of the trays 106 disposed in theinterior volume 104 of the vessel, with the trays having flow passageconduits 108 associated therewith, for flow of vapor upwardly in thevessel to the valve head assembly for dispensing, in use of the vessel.

The solid precursor can be coated on interior surfaces in the interiorvolume of the vessel, e.g., on the surfaces of the trays 106 andconduits 108. Such coating may be effected by introduction of theprecursor into the vessel in a vapor form from which the solid precursoris condensed in a film on the surfaces in the vessel. Alternatively, theprecursor solid may be dissolved or suspended in a solvent medium anddeposited on surfaces in the interior volume of the vessel by solventevaporation. In yet another method the precursor may be melted andpoured onto the surfaces in the interior volume of the vessel. For suchpurpose, the vessel may contain substrate articles or elements thatprovide additional surface area in the vessel for support of theprecursor film thereon.

As a still further alternative, the solid precursor may be provided ingranular or finely divided form, which is poured into the vessel to beretained on the top supporting surfaces of the respective trays 106therein. As a further alternative, a metal foam body may be provided inthe interior volume of the vessel, which contains porosity of a specificcharacter adapted for retaining the solid particulate precursor forhighly efficient vaporization thereof.

The vessel 102 has a neck portion 109 to which is joined the valve headassembly 110. The valve head assembly is equipped with a hand wheel 112in the embodiment shown. In lieu of a hand wheel, the valve headassembly may in turn be coupled or operatively linked to a controllerfor automated operation. The valve head assembly 110 includes adispensing port 114, which may be configured for coupling to a fittingor connection element to join flow circuitry to the vessel. Such flowcircuitry is schematically represented by arrow A in FIG. 1, and theflow circuitry may be coupled to a downstream ALD or chemical vapordeposition chamber (not shown in FIG. 1).

In use, the vessel 102 can be heated with a suitable heater, such as aheating jacket, resistance heating elements affixed to the exterior wallsurface of the vessel, etc., so that solid precursor in the vessel is atleast partially volatilized to provide precursor vapor. The input ofheat is schematically shown in FIG. 1 by the reference arrow Q. Theprecursor vapor is discharged from the vessel through the valve passagesin the valve head assembly 110 when the hand wheel 112 or alternativevalve actuator or controller is translated so that the valve is in anopen position, whereupon vapor deriving from the precursor is dispensedinto the flow circuitry schematically indicated by arrow A.

In lieu of solid delivery of the precursor, the precursor may beprovided in a solvent medium, forming a solution or suspension. Suchprecursor-containing solvent composition then may be delivered by liquiddelivery and flash vaporized to produce a precursor vapor. The precursorvapor is contacted with a substrate under deposition conditions, todeposit the metal on the substrate as a film thereon.

In one embodiment, the precursor is dissolved in an ionic liquid medium,from which precursor vapor is withdrawn from the ionic liquid solutionunder dispensing conditions.

As a still further alternative, the precursor may be stored in anadsorbed state on a suitable solid-phase physical adsorbent storagemedium in the interior volume of the vessel. In use, the precursor vaporis dispensed from the vessel under dispensing conditions involvingdesorption of the adsorbed precursor from the solid-phase physicaladsorbent storage medium.

Supply vessels for precursor delivery may be of widely varying type, andmay employ vessels such as those commercially available from ATMI, Inc.(Danbury, Conn.) under the trademarks SDS, SAGE, VAC, VACSorb, andProE-Vap, as may be appropriate in a given storage and dispensingapplication for a particular precursor of the invention.

The precursors of the invention thus may be employed to form precursorvapor for contacting with a substrate to deposit an antimony-containingthin film thereon.

In a preferred aspect, the invention utilizes the precursors to conductatomic layer deposition, yielding ALD films of superior conformalitythat are uniformly coated on the substrate with high step coverage andconformality even on high aspect ratio structures.

Accordingly, the precursors of the present invention enable a widevariety of microelectronic devices, e.g., semiconductor products, flatpanel displays, etc., to be fabricated with antimony-containing films ofsuperior quality.

The present invention will be better understood with reference to thefollowing non-limiting examples:

Example 1 Preparation of (tBuNCH₂CH₂NtBu)SbCl

General Procedures

All manipulations, unless otherwise noted, were performed under a drynitrogen atmosphere with use of either a drybox or standard Schlenktechniques. Benzene-d₆ was dried over 4 Å molecular sieves. NMR spectrawere recorded at 21° C. on a Mercury 300 MHz Fourier transform (FT)spectrometer and referenced to solvents (residual protons in the ¹Hspectra). n-BuLi in hexanes (1.6 M), and N,N′-diisopropylcarbodiimidewere purchased from Aldrich and used as received. GeCl₂-dioxane wasobtained from Gelest. THF, ether, and pentane were purchased fromAldrich and dried using a solvent drying system with activatedalumina/molecular sieve columns before use.

A solution of N,N′-di-tert-butylethylenediamine (37.8 g, 47.2 mL, 219mmol), triethylamine (44.4 g, 60.8 mL, 438 mmol) in diethylether (650mL) was cooled in an ice-bath. A solution of antimony trichloride (50.0g, 219 mmol) in ether (100 mL) was slowly added forming a thick whiteprecipitate. The mixture was warmed to room temperature and stirredovernight. The mixture was filtered under nitrogen (medium glass frit),and the solvent evaporated from the clear yellow solution under vacuumto give a pale yellow solid. The compound was purified by vacuumsublimation (50° C. oil bath, 50 mtorr, <−5° C. cold-finger) overnight.A semi-crystalline white powder was obtained, 55.5 g, 77%. ¹H NMR(C₆D₆): 3.38, 3.12 (m, 4H, CH₂CH₂), 1.18 (s, 18H, t-Bu). ¹³C NMR (C₆D₆):55.77 (CR₄), 51.54 (CH₂CH₂), 31.48 (CH₃). Anal. Calcd for C₁₀H₂₂N₂SbCl:C, 36.67; H, 6.77; N, 8.55. Found: C, 36.71; H, 7.06; N, 8.58.

Example 2 Preparation of (tBuNCH₂CH₂NtBu)SbNMe₂

A solution of (tBuNCCNtBu)SbCl (15.00 g, 45.8 mmol) in diethylether (50mL) was slowly added to an ice-cold suspension of lithium dimethylamide(2.34 g, 45.8 mmol) in diethylether (100 mL). The lithium amidedissolves then forms a fine white precipitate. The reaction mixture waswarmed to room temperature and stirred overnight. The solvent wasevaporated under vacuum, the grey residue extracted with pentane (100mL), filtered under nitrogen (medium glass frit), and the solventevaporated under vacuum to give a deep yellow oil. The oil was purifiedby fractional distillation (120° C. oil bath, <50 mtorr) collecting aclear and colorless liquid at 55° C. Yield: 12.1 g, 79%. ¹H NMR (C₆D₆):3.29, 2.96 (m, 4H, CH₂CH₂), 2.87 (s, 6H, NMe₂), 1.25 (s, 18H, t-Bu). ¹³CNMR (C₆D₆): 54.22 (CR₄), 50.16 (CH₂CH₂), 41.25 (NMe₂), 31.48 (CH₃).Anal. Calcd for C₁₂H₂₈N₃Sb: C, 42.88; H, 8.40; N, 12.50. Found: C,42.78; H, 8.48; N, 12.46.

Example 3 Preparation of (tBuNCH₂CH₂NtBu)Sb(iPr)

A solution of isopropylmagnesium chloride (6.11 mL, 12.21 mmol, 2.0M inether) was slowly added to an ice-cold solution of (tBuNCCNtBu)SbCl(4.00 g, 12.21 mmol) in diethylether (50 mL). A thick white solidformed. The reaction mixture was warmed to room temperature and stirredovernight. Pentane (50 mL) was added to the slurry and the mixturefiltered under nitrogen (medium glass frit). The solvent was evaporatedunder vacuum to give a straw colored oil. The oil was purified byfractional distillation (100° C. oil bath, <50 mtorr) collecting a clearand colorless liquid at 52° C. Yield: 1.2 g, 29%. ¹H NMR (C₆D₆): 3.18,3.00 (m, 4H, CH₂CH₂), 1.64 (sept, 1H, iPr), 1.36 (d, 6H, ³J=7.5 Hz,iPr), 1.20 (s, 18H, tBu). ¹³C NMR (C₆D₆): 54.61 (tBuC), 53.51 (CH₂CH₂),32.21 (tBu), 32.06, 23.01 (iPrCH), 20.23 (iPr). Anal. Calcd forC₁₃H₂₉N₂Sb: C, 46.59; H, 8.72; N, 8.36. Found: C, 46.44; H, 8.73; N,8.39.

Example 4 Preparation of (tBuNCH₂CH₂NtBu)Sb(Me₅C₅)

A solution of (tBuNCCNtBu)SbCl (3.00 g, 9.16 mmol) in diethylether (20mL) was slowly added to an ice-cold suspension of lithiumpentamethylcyclopentadienyl (1.30 g, 9.16 mmol) in diethylether (50 mL)forming an orange precipitate. The reaction mixture was warmed to roomtemperature and stirred overnight. The solvent was evaporated undervacuum, the residue extracted with pentane (100 mL), filtered undernitrogen (medium glass frit), and the solvent evaporated under vacuum togive an orange powder. The solid was purified by sublimation (80° C. oilbath, <50 mtorr) collecting an orange crystalline solid. Yield: 2.7 g,69%. Single-crystals were obtained from a saturated diethylethersolution at −37° C. ¹H NMR (C₆D₆): 3.19, 3.05 (m, 4H, CH₂CH₂), 2.19 (s,15H, CH₃ Cp), 1.18 (s, 18H, t-Bu). ¹³C NMR (C₆D₆): 121.84 (Cp), 55.38(tBuC), 54.06 (CH₂CH₂), 32.45, 32.14? ((CH₃)₃C), 12.65 (CH₃ Cp). Anal.Calcd for C₂₀H₃₇N₂Sb: C, 56.22; H, 8.73; N, 6.56. Found: C, 56.14; H,8.67; N, 6.39.

Example 5 Preparation of (tBuNCH₂CH₂NtBu)Sb{Me₂NC(iPrN)₂}

N,N′-diisopropylcarbodiimide (1.93 g, 2.36 mL, 15.27 mmol) was slowlyadded to an ice-cold suspension of lithium dimethylamide (0.78 g, 15.27mmol) in diethyl ether (50 mL). The resulting clear pale yellow solutionwas stirred at 0° C. for 3 hours. A solution of (tBuNCCNtBu)SbCl (5.00g, 15.27 mmol) in diethylether (25 mL) was slowly added to the lithiumguanidinate. A pale yellow precipitate formed upon addition. Thereaction mixture was warmed to room temperature and stirred overnight.The solvent was evaporated under vacuum, the white residue extractedwith pentane (100 mL), filtered under nitrogen (medium glass fit), andthe solvent evaporated under vacuum to give a white powder. The compoundwas purified by sublimation (60° C. oil bath, <50 mtorr). Yield: 5.4 g,77%. ¹H NMR (C₆D₆): 4.0 (vbrs, 2H, iPrCH) 3.36, 3.17 (m, 4H, CH₂CH₂),2.53 (s, 6H, NMe₂), 1.41 (s, 18H, t-Bu), 1.34 (brs, 12H, iPr). ¹³C NMR(C₆D₆): 100.86 (NCN), 54.83 (tBuC), 50.95 (CH₂CH₂), 41.85 (NMe₂), 31.75(tBu), 31.45 (iPrCH), 26.17 (iPr). Anal. Calcd for C₁₆H₄₂N₅Sb: C, 49.36;H, 9.16; N, 15.15. Found: C, 49.41; H, 9.34; N, 14.93.

Example 6 Preparation of (tBuNCH₂CH₂NtBu)Sb{CH₃C(iPrN)₂}

A solution of methyl-lithium (28.6 mL, 45.8 mmol, 1.6M in hexanes) wasslowly added to an ice-cold solution of N,N′-diisopropylcarbodiimide(5.78 g, 45.8 mmol) in diethyl ether (100 mL). The resulting clear andcolorless solution was stirred at 0° C. for 3 hours. A solution of(tBuNCCNtBu)SbCl (15.0 g, 45.8 mmol) in diethylether (50 mL) was slowlyadded to the lithium amidinate. A fine white precipitate formed uponaddition and solution phase turned yellow. The reaction mixture waswarmed to room temperature and stirred overnight. The solvent wasevaporated under vacuum, the yellow residue extracted with pentane (100mL), filtered under nitrogen (medium glass frit), and the solventevaporated under vacuum to give a yellow oil. The residue was trituratedwith diethylether (2×10 mL) and the solvent evaporated under vacuum. Ayellow solid was obtained. The compound was purified by sublimation (70°C. oil bath, <50 mtorr, <−5° C. coolant cold-finger) to give a colorlesscrystalline solid. Yield: 11.8 g, 60%. ¹H NMR (C₆D₆): 3.24 (m, 4H,CH₂CH₂), 1.74 (s, 3H, CH₃CN), 1.38 (s, 18H, tBu), 1.24 (d, ³J=6.6 Hz,iPr). ¹³C NMR (C₆D₆): 166 (NCN), 54.75 (CR₄), 51.12 (CH₂CH₂), 31.88(iPrCH), 31.52 (tBu), 25.01 (iPr), 15.62 (CH₃CN). Anal. Calcd forC₁₈H₃₆N₄Sb: C, 49.90; H, 9.07; N, 12.93. Found: C, 49.73; H, 8.98; N,12.87.

While the invention has been described herein in reference to specificaspects, features and illustrative embodiments of the invention, it willbe appreciated that the utility of the invention is not thus limited,but rather extends to and encompasses numerous other variations,modifications and alternative embodiments, as will suggest themselves tothose of ordinary skill in the field of the present invention, based onthe disclosure herein. Correspondingly, the invention as hereinafterclaimed is intended to be broadly construed and interpreted, asincluding all such variations, modifications and alternativeembodiments, within its spirit and scope.

What is claimed is:
 1. An antimony precursor having the followingformula:

wherein: each of R, R¹, R², R³, R⁴, R⁵ and R⁶ is the same or differentfrom others, and each is independently selected from H, halogen, C₁-C₆alkyl, C₁-C₆ alkoxy, C₃-C₈ cycloalkyl, C₆-C₁₀ aryl, silyl, substitutedsilyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl,imidoalkyl and acetylalkyl; n is an integer from 1 to
 7. 2. The antimonyprecursor of claim 1, of the following formula:


3. The antimony precursor of claim 1, wherein n is
 2. 4. The antimonyprecursor of claim 1, wherein R⁵ and R⁶ are independently selected fromC₁-C₆ alkyl.
 5. The antimony precursor of claim 1, comprising anantimony bis-amide of the formula wherein R⁵ and R⁶ are independentlyselected from methyl and ethyl.
 6. The antimony precursor of claim 1,wherein R³ and R⁴ are each H, and n is
 2. 7. The antimony precursor ofclaim 1, wherein R¹ and R² are each tertiary butyl.
 8. The antimonyprecursor of claim 1, wherein R⁵ is selected from C₁-C₆ alkyl and R⁶ isaminoalkyl.
 9. The antimony precursor of claim 1, comprising an antimonybis-amide of the formula


10. The antimony precursor of claim 1, comprising an antimony bis-amideof the formula


11. A composition comprising: a. an antimony precursor claim 1; and b. asolvent medium in which said compound is dissolved.
 12. The compositionof claim 11, wherein the solvent medium comprises a hydrocarbon solvent.13. The composition of claim 12, wherein the hydrocarbon solventcomprises one or more alkanes, aromatics and amines.
 14. The antimonyprecursor of claim 1, wherein n is an integer of from 1 to
 6. 15. Thecomposition of claim 12, wherein the hydrocarbon solvent comprises oneor more of hexane, heptane, octane, and pentane, benzene, toluene,triethylamine, and tertbutylamine.
 16. A precursor vapor comprisingvapor of an antimony precursor of claim
 1. 17. The precursor vapor ofclaim 16, further comprising a co-reactant selected from the groupconsisting of O₂, N₂O, H₂O, ozone, O₂ plasma, hydrogen, H₂/plasma,amines, imines, hydrazines, silanes, germanes, ammonia, alkanes,alkenes, alkynes, boranes and compatible mixtures thereof, wherein theprecursor vapor may be delivered simultaneously with the co-reactant ormay be delivered in a pulsed manner wherein the precursor vapor andco-reactant are temporarily separated.
 18. A method of depositing anantimony-containing film on a substrate, comprising volatilizing anantimony precursor of claim 1 to form a precursor vapor, and contactingthe substrate with the precursor vapor under deposition conditions toform the antimony-containing film on the substrate.
 19. A method offorming a GST film on a substrate, comprising depositing antimony on thesubstrate from vapor of an antimony precursor of claim
 1. 20. A methodof making a PCRAM device, comprising forming a GST film on a substratefor fabrication of said device, wherein said forming comprisesdepositing antimony on the substrate from vapor of an antimony precursorof claim
 1. 21. A method of forming an antimony-containing film on asubstrate, comprising volatilizing precursor of claim 1 to form aprecursor vapor, and contacting the precursor vapor with the substrateunder atomic layer deposition or chemical vapor deposition conditions.22. The method of claim 21, wherein the antimony-containing film is aGST film.
 23. The method of claim 21, wherein the antimony-containingfilm is an amorphous GeTe film.
 24. The method of claim 21, wherein theantimony-containing film is an amorphous SbTe film.
 25. The method ofclaim 21, comprising a phase change random access memory devicemanufacturing process.
 26. A method of combating pre-reaction of a vaporphase precursor derived from a precursor of claim 1 in contact with asubstrate for deposition of a film component thereon, comprisingcontacting said substrate, prior to said contact of the vapor phaseprecursor therewith, with a pre-reaction-combating agent selected fromthe group consisting of (i) heteroatom (O, N, S) organo Lewis basecompounds, (ii) free radical inhibitors, and (iii) deuterium-containingreagents.